氮化镓（GaN）纳米柱的生长控制检查

Gallium Nitride (GaN) crystal growth must be carefully optimized and controlled in order to improve its properties. Examples is showing examination of the Metalorganic vapour-phase epitaxy (MOVPE) overgrowth above an array of GaN nanotubes. GaN samples containing a high density of nano-columns can be quickly and non-destructively analysed using an Ultim Extreme EDS detector optimized for high resolution; low voltage and low current analysis.

By downloading this application note, you will learn:

• Semiconductors quality growth inspection: MOVPE overgrowth above an array of GaN nanotubes
• Ultim Extreme EDS detector applications for analysis of semiconductor material 
• Semiconductors non-destructive high resolution; low voltage and low current analysis

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