TEM中的半导体成像-实时解决峰值重叠问题

Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM. Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis.

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